The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Jun. 10, 1997
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device having a via by using a composite dielectric layer is disclosed. The method includes forming a first dielectric layer over a first conductive layer disposed on a substrate, where the first dielectric layer has a first etch rate. A second dielectric layer is then formed on the first dielectric layer, where the second dielectric layer has a second etch rate higher than the first etch rate. The second dielectric layer is isotropically removed by masking and etching to form a rounded contoured recess in the second dielectric layer using the first dielectric layer as an etch stop layer. The first dielectric layer is anisotropically removed by masking and etching to form the via in the first dielectric layer, where the bottom of the rounded contoured recess is aligned to the via.