The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Jul. 23, 1997
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A new method for planarizing a shallow trench isolation is disclosed by using a polysilicon layer or bottom anti-reflective coating (BARC) to form a reverse tone with a taper profile. The formation of the shallow trench isolation described includes a pad layer, and a silicon nitride layer formed-on a semiconductor wafer. Trenches are created by photolithography and dry etching processes. An oxide layer is formed in the trenches for the purpose of isolation. A polysilicon layer or bottom anti-reflective coating is subsequently formed on the oxide layer. A plurality of openings are generated in the polysilicon or the BARC layer. An etching is used to etch the oxide layer, thereby forming a reverse tone having a taper profile. A Chemical Mechanical Polishing is performed to planarize the surface of a semiconductor wafer.