The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Apr. 05, 1996
Koon Chong So, Santa Clara, CA (US);
Yan Man Tsui, Union City, CA (US);
Fwu-Iuan Hshieh, Saratoga, CA (US);
True-Lon Lin, Cupertino, CA (US);
Danny Chi Nim, San Jose, CA (US);
MegaMOS Corporation, San Jose, CA (US);
Abstract
This invention discloses a MOSFET device which includes a plurality of vertical cells each includes a source, a drain, and a channel for conducting source-to-drain current therethrough. Each of the vertical cells is surrounded by a polysilicon layer acting as a gate for controlling the source-to-drain current through the channel. The MOSFET device further include a plurality of doping trenches filled with trench-filling materials, The MOSFET device further includes a plurality of deep-doped regions disposed underneath the doping trenches wherein the deep-doped region extends downwardly to a depth which is substantially a sum of an implant depth of the deep-doped region and a vertical diffusion depth below a bottom of the doping trenches.