The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Nov. 26, 1997
Koon Chong So, San Jose, CA (US);
Danny Chi Nim, San Jose, CA (US);
Fwu-Iuan Hshieh, Saratoga, CA (US);
Yan Man Tsui, Union City, CA (US);
True-Lon Lin, Cupertino, CA (US);
Shu-Hui Cheng, Milpitas, CA (US);
MegaMOS Corporation, San Jose, CA (US);
Abstract
Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve higher breakdown voltage and improved device ruggedness. The power transistor includes a core cell area which includes a plurality of power transistor cells and a termination area. The power transistor further includes an outer pickup guarding ring, disposed in the termination area guarding the core cell area, for picking up free charged-particles generated in the termination area for preventing the free charged particles from entering the core cell area. In another preferred embodiment, the power transistor further includes an inner pickup guarding fence and blocks, disposed between the termination area and the core cell area for picking up free charged-particles not yet picked up by the outer pickup guarding ring for preventing the free charged particles from entering the core cell area.