The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Jul. 10, 1997
Applicant:
Inventors:
Brett E Huff, Fremont, CA (US);
Farhad Moghadam, Los Gatos, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438778 ; 438778 ; 438780 ; 438788 ; 438789 ; 438624 ; 438760 ;
Abstract
A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.