The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1999
Filed:
May. 27, 1997
Michinari Sassa, Aichi-ken, JP;
Norikatsu Koide, Aichi-ken, JP;
Shiro Yamazaki, Aichi-ken, JP;
Junichi Umezaki, Aichi-ken, JP;
Naoki Shibata, Aichi-ken, JP;
Masayoshi Koike, Aichi-ken, JP;
Isamu Akasaki, Nishi-ku, Nagoya-shi, Aichi-ken, 451, JP;
Hiroshi Amano, Nagoya-shi, Aichi-ken, 465, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Research Development Corporation of Japan, Saitama-key, JP;
Other;
Abstract
A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.