The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Jun. 20, 1997
Munir D Naeem, Poughkeepsie, NY (US);
Stuart M Burns, Ridgefield, CT (US);
Nancy Greco, LaGrangeville, NY (US);
Steve Greco, LaGrangeville, NY (US);
Virinder Grewal, Ebersberg, DE;
Ernest Levine, Poughkeepsie, NY (US);
Masaki Narita, Yokohama, JP;
Bruno Spuler, Wappingers Falls, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Kabushiki Kaisha Toshiba, Kanagawa-Ken, JP;
Abstract
A method in a plasma processing chamber for etching through a selected portion of a layer stack. The layer stack comprises a metallization layer, a first barrier layer disposed adjacent to the metallization layer, and a photoresist layer disposed above the metallization layer. The method includes etching at least partially through the first barrier layer using a high sputter component etch. The method further includes etching at least partially through the metallization layer using a low sputter component etch. The low sputter component etch has a sputter component lower than a sputter component of the high sputter component etch.