The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 1998

Filed:

May. 15, 1997
Applicant:
Inventors:

San-De Tzu, Taipei, TW;

Yi-Hsu Chen, Hsinchu, TW;

Chih-Chiang Tu, Tauyan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ;
Abstract

A mask and method of forming a mask which minimizes the light transmission in the border regions of attenuating phase shifting masks. The mask uses square contact holes formed in the attenuating phase shifting material in the border regions. The square contact holes are located at the edge of the mask pattern region beginning at each corner of the mask pattern region and working toward the center of each side of the mask pattern region using a contact hole pitch. At the center of each side of the mask pattern region the pitch is discontinuous and a row of rectangular contact holes are formed.


Find Patent Forward Citations

Tzu, San-De. (1998). Method of blind border pattern layout for attenuated phase shifting masks (U.S. Patent No. 5817439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5817439

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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