The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Mar. 26, 1997
Michael D Armacost, Wallkill, NY (US);
Tina J Wagner, Newburgh, NY (US);
Michael L Passow, Pleasant Valley, NY (US);
Dominic J Schepis, Wappingers Falls, NY (US);
Matthew J Sendelbach, Wappingers Falls, NY (US);
William C Wille, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A dry etching process for etching an oxide layer on a substrate in which a plasma is created in a gaseous mixture containing C.sub.4 F.sub.8 and C.sub.2 F.sub.6. The dry etch process is useful for etching an oxide layer stopping on a silicon nitride layer on a semiconductor wafer of an integrated circuit structure as it eliminates resist blistering without sacrificing high selectivity to nitride, via wall angle, and/or etch uniformity.