The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Jul. 14, 1995
Applicant:
Inventors:
Piotr Edelman, Tampa, FL (US);
Andrew M Hoff, Tampa, FL (US);
Lubek Jastrzebski, Tampa, FL (US);
Jacek Lagowski, Tampa, FL (US);
Assignees:
University of South Florida, Tampa, FL (US);
Semiconductor Diagnostics, Inc., Tampa, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324765 ; 324769 ; 437-8 ; 29838 ;
Abstract
A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.