The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
May. 05, 1995
Applicant:
Inventors:
Hisashi Masumura, Nishi-shirakawa-gun, JP;
Masami Nakano, Nishi-shirakawa-gun, JP;
Hideo Kudo, Nishi-shirakawa-gun, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
451 41 ; 451 36 ; 437 12 ; 148 332 ;
Abstract
A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the wafer, is disclosed. The method comprises the steps of; moving the wafer on an abrasive cloth relatively, and supplying an abrasive liquid having a pH in the range of 4-9 which contains silica particles having an average diameter in the range of 0.1-10 .mu.m as abrasive grains, between the wafer and the abrasive cloth.