The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
May. 23, 1996
Applicant:
Inventors:
Assignee:
United Microelectronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K / ; H05K / ;
U.S. Cl.
CPC ...
438100 ; 438663 ;
Abstract
A method for removing a diffusion barrier layer on pad regions and diminishing the effect of plasma ions induced when removing a photoresist layer by a plasma asher. A two stage rapid thermal processing step is applied to the partially-removed diffusion barrier layer before a metal layer is formed. The first stage lasts a longer period of time at a lower temperature, for example, in the range of between 50 and 60 seconds at a temperature of about 600.degree. C. The second stage lasts a shorter period of time at a higher temperature, for example, in the range of between 20 and 30 seconds at a temperature of about 750.degree. C.