The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Sep. 05, 1995
Tzu-min Peng, Hsin-Chu, TW;
Yung-Haw Liaw, Hsin-Chu, TW;
Cheng-Te Chu, Hsin-Chu, TW;
Hsin-chieh Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for backside grinding a semiconductor wafer and forming a contamination free bonding pad connection. The method comprises forming a passivation layer over a metal layer. Applying a photoresist pattern with an opening which will define a bonding pad area and removing the passivation layer exposed in the opening. Next, the photoresist is removed, but a polymer residue is often formed on the surfaces of the passivation layer surrounding the bonding pad. In a novel step, the residue is removed using an etchant containing Dimethylsulfoxide (D.M.D.O.) aud Monoethanolamine (M.E.A.) and is followed by au oxygen plasma treatment. Next, the device side of the wafer is covered with a protective tape and the backside of the wafer is grouud back. The tape is removed revealing a contamination free bonding pad area. A bonding connection is then made to the bonding pad.