The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 1998
Filed:
Sep. 20, 1995
Shin Okamoto, Kofu, JP;
Kouichiro Inazawa, Tokyo, JP;
Sachiko Furuya, Tokyo, JP;
Maki Koizumi, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An etching method comprising the steps of forming an etched layer on a wafer and covering the etched layer with an anti-reflection cover and then the anti-reflection cover with a photoresist film, pattern-exposing the photoresist film, developing the exposed photoresist film to form pattern openings in each of which the anti-reflection cover is exposed, and carrying the wafer into a chamber, exhausting the chamber to decompressed atmosphere, and introducing a mixed gas of C.sub.4 F.sub.8 gas and at least one of O.sub.2 and N.sub.2 gases into the process chamber to generate plasma of this mixed gas and act active species in this plasma on the wafer, whereby the anti-reflection cover which is exposed in each of the pattern openings is etched and the etched layer is then etched without etching the photoresist film formed on an inner surface each pattern opening.