The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1998
Filed:
Mar. 07, 1996
Applicant:
Inventors:
Sen Fu Chen, Taipei, TW;
Jie Shing Wu, Hsin-Chu, TW;
Po-Tau Chu, Hsin-Chu, TW;
Wen-Cheng Chang, Tauyuan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438612 ; 438613 ;
Abstract
A protective cap of dielectric material is deposited by plasma-enhanced chemical vapor deposition on the surface of electrical bonding pads of semiconductor integrated circuits prior to deposition of the final passivation layer. The protective cap serves to isolate the pad surface from electrochemical or other interaction with the etching solution used to open contact holes through the passivation layer. This prevents the formation of surface damage and residues on the pad which lead to yield and reliability problem with integrated circuits.