The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1998
Filed:
Dec. 06, 1994
Douglas Earl Benoit, Milton, VT (US);
Harold George Linde, Richmond, VT (US);
Denise Marie Puisto, Milton, VT (US);
Charles Arthur Whiting, Milton, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A temperature-sensitive film such as a resist is baked onto a semiconductor substrate such as a mask blank by immersion in a heated liquid. A barrier coating may optionally be applied to the substrate prior to immersion and later removed. The substrate is subsequently cooled by immersing the substrate in a cooling liquid or dissolving the heated liquid from the substrate with a rinsing liquid at a temperature sufficiently lower than that of the heated liquid. Temperature uniformity within .+-.0.2.degree. C. is thereby achieved across the regions of varying thickness in the silicon wafer and membrane. Where a resist has been deposited on the mask blank substrate, heating and cooling by immersion results in improved line size control after exposure and development down to 0.25 .mu.m.