The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 1997

Filed:

Mar. 13, 1995
Applicant:
Inventors:

Masayuki Ishikawa, Yokohama, JP;

Hideto Sugawara, Kawasaki, JP;

Yukie Nishikawa, Narashino, JP;

Masaaki Onomura, Tokyo, JP;

Shinji Saito, Yokohama, JP;

Peter James Parbrook, Kawasaki, JP;

Genichi Hatakoshi, Yokohama, JP;

Koichi Nitta, Yokohama, JP;

John Rennie, Tokyo, JP;

Hiroaki Yoshida, Yokohama, JP;

Atsushi Kamata, Chigasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01S / ;
U.S. Cl.
CPC ...
257 99 ; 257773 ; 372 44 ; 372 50 ;
Abstract

A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

Published as:
JPH07254732A; US5696389A;

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