The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1997
Filed:
Jun. 21, 1996
Giang T Dao, Fremont, CA (US);
Joseph C Langston, Los Altos, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A new process and an improved process for fabricating device layers with ultrafine features. In one embodiment a device layer to be patterned is deposited above a substrate and a photoresist layer is deposited above that device layer. A reticle having a first transparent layer and a second opaque layer is used to pattern the photoresist layer. The reticle includes a first region with a first phase and a second region with a second phase such that the incident radiation is shifted when passing through the reticle. The second reticle layer is disposed above the first reticle layer and proximate to the location where the first region transitions to the second region of the first reticle layer. A stepper is used to expose the photoresist to radiation through the reticle. The critical dimensions of the device layer being patterned are controlled by adjusting the partial coherence of the stepper during exposure.