The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1997
Filed:
Dec. 27, 1993
Nobuyuki Takeyasu, Chiba, JP;
Hiroshi Yamamoto, Chiba, JP;
Yumiko Kawano, Chiba, JP;
Eiichi Kondoh, Chiba, JP;
Tomoharu Katagiri, Chiba, JP;
Tomohiro Ohta, Urayasu, JP;
Kawasaki Steel Corporation, Hyogo, JP;
Abstract
A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.