The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 1997
Filed:
Mar. 10, 1995
Robert F Foster, Phoenix, AZ (US);
Joseph T Hillman, Scottsdale, AZ (US);
Rikhit Arora, Mesa, AZ (US);
Sony Corporation, Tokyo, JP;
Materials Research Corporation, Park Ridge, NJ (US);
Abstract
A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.