The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Mar. 14, 1995
Masayuki Ishikawa, Kanagawa-ken, JP;
Yukie Nishikawa, Chiba-ken, JP;
Masaaki Onomura, Tokyo, JP;
Shinji Saito, Kanagawa-ken, JP;
Peter J Parbrook, Kanagawa-ken, JP;
Genichi Hatakoshi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;
Abstract
A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.