The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Jun. 05, 1995
Applicant:
Inventors:
Robert F Foster, Phoenix, AZ (US);
Joseph T Hillman, Scottsdale, AZ (US);
Rikhit Arora, Mesa, AZ (US);
Assignees:
Sony Corporation, Tokyo, JP;
Materials Research Corporation, Park Ridge, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
427535 ; 4272481 ; 427294 ; 427569 ;
Abstract
A titanium nitride film is annealed at a temperature less than 500.degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.
Foster, Robert. (1996). Process for plasma enhanced anneal of titanium nitride (U.S. Patent No. 5567483). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5567483
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile