The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1996
Filed:
Jan. 30, 1995
Applicant:
Inventors:
Fumihiko Higuchi, Yokohama, JP;
Yoshio Fukasawa, Kofu, JP;
Assignees:
Tokyo Electron Limited, Tokyo, JP;
Tokyo Electron Yamanashi Limited, Nirasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566431 ; 1566621 ; 437233 ;
Abstract
In plasma-etching a polysilicon layer of a semiconductor wafer where the polysilicon layer is formed on an SiO.sub.2 film, plasma of a processing gas including a halogen element containing gas and a gas containing oxygen or nitrogen is generated, and a predetermined portion of the polysilicon layer is selectively exposed in plasma, thereby etching the portion.