The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Mar. 06, 1996
Taiwan Semiconductor Manufacturing Company LTD, Hsin-Chu, TW;
Abstract
A method is described for forming a high contact resistance region within the drain region or source region of an insulated gate field effect transistor as part of a high resistance resistor for electrostatic discharge protection of the field effect transistor. The high resistance contact region is formed as part of a self aligned silicide, or salicide, contact process. Nitrogen ion implantation at the high resistance contact region into the metal which will be used to form the metal silicide low resistance contacts converts the metal at the high resistance contact region to metal nitride. Since all the metal at the high resistance contact region is converted to metal nitride there is no free metal to form metal silicide at the high resistance contact region when the low resistance metal silicide contacts are formed. Low resistance contacts to the gate electrode, source, and drain are formed using metal silicide.