The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Jul. 20, 1994
Keiichi Yoshizumi, Kokubunji, JP;
Kazushi Fukuda, Kodaira, JP;
Seiichi Ariga, Ohme, JP;
Shuji Ikeda, Koganei, JP;
Makoto Saeki, Ohme, JP;
Kiyoshi Nagai, Kodaira, JP;
Soichiro Hashiba, Nagoya, JP;
Shinji Nishihara, Koganei, JP;
Fumiyuki Kanai, Houya, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi ULSI Engineering Corp., Tokyo, JP;
Abstract
In depositing a silicon oxide film which constitutes part of a final passivation film onto a bonding pad formed on an interlayer insulating film, the silicon oxide depositing step is divided in two stages, and after the first deposition, the bonding pad is once exposed by etching, then the second deposition is performed, whereby the silicon oxide film which has thus been deposited in two stages is formed over a fuse element formed under the interlayer insulating film, while on the bonding pad is formed only the silicon oxide film deposited in the second stage. As a result, at the time of etching polyimide resin, silicon nitride film and silicon oxide film successively to expose the bonding pad, there remains a sufficient thickness of insulating film between the bottom of an aperture which is formed at the same time and the fuse element. Thereafter, an electrical test is conducted while applying a probe to the bonding pad and, where required, the fuse element located under the aperture is cut.