The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Jul. 27, 1994
Tatsuo Nakato, Vancouver, WA (US);
Narayanan Meyyappan, Woburn, MA (US);
Sharp Microelectronics Technology, Inc., Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The invention provides a method of forming shallow SIMOX (Separation by IMplantation of OXygen) substrates by implantation of molecular oxygen ions (O.sub.2 +), instead of implanting atomic oxygen ions (O+) as is done in prior art SIMOX processes. Use of molecular oxygen ions (O.sub.2 +) doubles the yield of oxygen atoms implanted for each unit of electric charge deposited in the wafer. The resultant structure, after annealing, has a defect density which is not substantially different from SIMOX processing using atomic oxygen ions (O+). An alternative method for implanting molecular nitrogen ions is also disclosed.