The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
Nov. 12, 1993
Applicant:
Inventors:
Masaru Hori, Aichi, JP;
Haruo Okano, Tokyo, JP;
Michishige Aoyama, Suzuka, JP;
Masao Ito, Kitakami, JP;
Kei Hattori, Yokohama, JP;
Fumihiko Higuchi, Yokohama, JP;
Yoshifumi Tahara, Machida, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
216 72 ; 134-1 ; 216 48 ; 216 47 ; 216 67 ; 216 77 ; 216 13 ;
Abstract
According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.