The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 1994

Filed:

Jun. 25, 1993
Applicant:
Inventors:

Toshihiko Tanaka, Tokyo, JP;

Mitsuaki Morigami, Tokyo, JP;

Iwao Higashikawa, Tokyo, JP;

Takeo Watanabe, Tokyo, JP;

Assignee:

SORTEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430322 ; 430323 ; 430325 ; 430156 ; 430270 ; 430311 ; 430396 ; 430494 ;
Abstract

In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yieldings of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.


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