The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1994
Filed:
May. 06, 1993
Michael A Van Buskirk, San Jose, CA (US);
Kevin W Plouse, San Jose, CA (US);
Joseph G Pawletko, Sunnyvale, CA (US);
Chi Chang, Redwood City, CA (US);
Sameer S Haddad, San Jose, CA (US);
Ravi P Gutala, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An over-erased bit correction structure is provided for performing a correction operation on over-erased memory cells in an array of flash EEPROM memory cells during programming operations so as to render high endurance. Sensing circuitry (23) is used to detect column leakage current indicative of an over-erased bit. If an over-erased bit is determined, a pulse counter (25) is activated so as to apply programming pulses to the control gate of the selected memory cell so as to program back the negative threshold voltage of the over-erased bit to a positive voltage.