The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
Mar. 04, 1993
Tokuhisa Ohiwa, Kanagawa, JP;
Hisataka Hayashi, Chiba, JP;
Keiji Horioka, Kanagawa, JP;
Haruo Okano, Tokyo, JP;
Takaya Matsushita, Tokyo, JP;
Isahiro Hasegawa, Kanagawa, JP;
Akira Takeuchi, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Abstract
A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.