The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Aug. 19, 1991
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
Wolodymyr Czubatyj, Warren, MI (US);
Quiyi Ye, Rochester, MI (US);
David A Strand, West Bloomfield, MI (US);
Stephen J Hudgens, Southfield, MI (US);
Energy Conversion Devices, Inc., Troy, MI (US);
Abstract
A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.