The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 1993

Filed:

Nov. 09, 1992
Applicant:
Inventors:

Johannes J Schmitz, Sunnyvale, CA (US);

Sien G Kang, Tracy, CA (US);

Edward J Rode, San Ramon, CA (US);

Assignee:

Genus, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437192 ; 437189 ; 437190 ;
Abstract

A chemical vapor deposition process performed at a temperature below 440 degrees C. for blanket tungsten deposition as a step in manufacturing integrated circuits deposits an integrated film suitable for voidless fill of vias as small as 0.5 microns in width and with aspect ratios of more than 2, while providing resistivity well below 100 micro-ohms per square, film stress generally in the mid 7E+09 dynes per square centimeter and below, and reflectivity of more than 40%, measured relative to silicon at 436 nanometer wavelength for 1 micron film thickness, while avoiding the use of nitrogen in the process.


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