The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1993
Filed:
May. 04, 1992
Applicant:
Inventors:
Assignee:
Zilog, Inc., Campbell, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437164 ; 437233 ; 437934 ; 437141 ; 148D / ; 148D / ;
Abstract
The present invention concerns a method for doping a polysilicon layer with phosphorous in which phosphorous oxychloride is supplied to the silicon wafer near the beginning of the oven temperature ramping of the silicon wafer. By introducing the phosphorous oxychloride earlier than in prior art methods, the present invention can reduce the poly rho and poly rho sigma of the doped polysilicon layer. Alternatively, the root DT of the diffusion of the doped material in the doped silicon region on the silicon wafer can be reduced, which helps to maintain the junction depth of the doped silicon region.