The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1993
Filed:
Mar. 27, 1992
Takao Kumihashi, Kokubunji, JP;
Kazunori Tsujimoto, Higashi-yamato, JP;
Shinichi Tachi, Sayama, JP;
Masafumi Kanetomo, Tokyo, JP;
Junichi Kobayashi, Ushiku, JP;
Tatehito Usui, Ibaraki, JP;
Nobuyuki Mise, Chiyodacho-inayoshi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A plasma treatment method and apparatus utilize various gas inlet and outlet structure arrangements to optimize treatment characteristics for a semiconductor wafer. A buffer zone is created between gas inlets and the discharge zone of the vacuum treatment chamber to enhance uniformity of gas flow. The evacuation arrangement enables reactant gas to be exhausted uniformly to reduce gas residence time below a threshold while maintaining optimum flow rates and etch uniformity at low effective exhaust speeds.