The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1993
Filed:
Apr. 02, 1991
Minori Noguchi, Yokohama, JP;
Yukio Kembo, Yokohama, JP;
Hiroshi Morioka, Yokohama, JP;
Hiroshi Yamaguchi, Fujisawa, JP;
Makiko Kohno, Kawasaki, JP;
Yoshimasa Ohshima, Yokohama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Method and apparatus of detecting, analyzing and evaluating the content of foreign matters such as dusts and impurities contained in various materials, units, processes and environment standing for constituting components of a mass production line during mass production start-up and during mass production, in order to manage a semiconductor production process. A mass production off-line system including an apparatus for detecting, analyzing and evaluating the content of foreign matters during the mass production start-up is separated from the production line and installed independently thereof. Monitors for detection of foreign matters are provided at necessary locations in the production line and monitor data is evaluated through various units to manage the content of foreign matters in the production line, permitting efficient and economical mass production start-up and mass production. The kind of element of a foreign matter on sampling wafer detected in the mass production line is analyzed by means of STM/STS and the results are compared with a data base to effect identification. A foreign matter or a contaminant is detected by detecting a scatttered beam, of a light spot which scans the surface of a substrate. The detection of the scattered beam is carried out under the condition that Rayleigh scattering of the light spot on the light spot irradiation and reflection paths and Rayleigh scattering of the scattered beam on the scattered beam detection path are suppressed to a minimum. For the suppression of Rayleigh scattering, a low-pressure or low-temperature atmosphere may be used.