The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 1993

Filed:

May. 15, 1987
Applicant:
Inventors:

Larry E Stillwagon, Summit, NJ (US);

Gary N Taylor, Bridgewater, NJ (US);

Thirumalai N Venkatesan, Bridgewater, NJ (US);

Thomas M Wolf, Succasunna, NJ (US);

Assignee:

AT&T Bell Laboratories, Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ;
U.S. Cl.
CPC ...
430323 ; 430167 ; 430194 ; 430197 ; 430270 ; 430298 ; 430311 ; 430312 ; 430313 ; 430314 ; 430315 ; 430324 ; 430325 ; 430326 ; 430327 ; 156628 ; 156643 ;
Abstract

A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.


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