The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1992
Filed:
Feb. 13, 1991
Applicant:
Inventors:
Masahiro Abe, Yokohama, JP;
Yasukazu Mase, Fujisawa, JP;
Toshihiko Katsura, Kawasaki, JP;
Masaharu Aoyama, Fujisawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; G01R / ;
U.S. Cl.
CPC ...
437-8 ; 437194 ; 437197 ; 437247 ; 427-8 ; 427 10 ; 73766 ;
Abstract
Measurement of temperature - internal stress characteristics of an Al thin film formed on an Si substrate is performed. The amount of an impurity or impurities mixed in the thin f ilm can be obtained in accordance with the measured characteristics. A migration start temperature of Al atoms in the thin film in the characteristics obtained when the temperature is increased is fed back as information to the thin film formation step, thereby controlling an impurity amount in an atmosphere for forming the thin film.