The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
Aug. 31, 1989
Hiroshi Kurosawa, Atsugi, JP;
Mitsuaki Amemiya, Atsugi, JP;
Shigeru Terashima, Atsugi, JP;
Koji Uda, Yokohama, JP;
Isamu Shimoda, Zama, JP;
Shunichi Uzawa, Nakamachi, JP;
Kunitaka Ozawa, Isehara, JP;
Makiko Mori, Atsugi, JP;
Ryuichi Ebinuma, Kawasaki, JP;
Shinichi Hara, Atsugi, JP;
Nobutoshi Mizusawa, Yamato, JP;
Eigo Kawakami, Ebina, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.