The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
May. 17, 1988
Hideo Sunami, Nishitama, JP;
Makoto Ohkura, Hachioji, JP;
Masanobu Miyao, Tokorozawa, JP;
Kikuo Kusukawa, Hachioji, JP;
Masahiro Moniwa, Kokubunji, JP;
ShinIchiro Kimura, Hachioji, JP;
Terunori Warabisako, Nishitama, JP;
Tokuo Kure, Kobubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.