The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 1990

Filed:

Aug. 08, 1988
Applicant:
Inventors:

Anton Schnegg, Burghausen, DE;

Gerhard Brehm, Emmerting, DE;

Helene Prigge, Unterschleissheim, DE;

Robert Rurlander, Halsbach, DE;

Fritz Ketterl, Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156638 ; 156662 ; 156642 ; 252 792 ; 252 793 ;
Abstract

A process and apparatus for etching semiconductor surfaces, in particular, ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.


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