The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 1989

Filed:

May. 26, 1988
Applicant:
Inventors:

Joachim Doehler, Union Lake, MI (US);

Stephen J Hudgens, Southfield, MI (US);

Stanford R Ovshinsky, Bloomfield Hills, MI (US);

Buddie Dotter II, Utica, MI (US);

Lester R Peedin, Oak Park, MI (US);

Jeffrey M Krisko, Highland, MI (US);

Annette Krisko, Highland, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 38 ; 427 47 ;
Abstract

A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.


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