The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1989
Filed:
Jul. 18, 1988
Applicant:
Inventors:
David A Cathey, Boise, ID (US);
John C Freeman, Boise, ID (US);
James Dale, Boise, ID (US);
William J Crane, Boise, ID (US);
Eric A Powell, Boise, ID (US);
Jeffrey V Musser, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ; C23C / ;
U.S. Cl.
CPC ...
204298 ; 156345 ; 42218605 ;
Abstract
A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.
Quick Actions:
Cathey, David. (1989). Temperature controlled anode for plasma dry etchers for etching (U.S. Patent No. 4859304). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4859304
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile