The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1988
Filed:
Sep. 16, 1987
Applicant:
Inventors:
Been-Jon Woo, Saratoga, CA (US);
Mark A Holler, Palo Alto, CA (US);
Ender Hokeler, Santa Clara, CA (US);
Sandra S Lee, Los Altos, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 30 ; 437 43 ; 437 44 ; 437147 ; 437154 ; 437157 ; 357 233 ; 357 239 ; 357 91 ; 148D / ; 148D / ; 148D / ;
Abstract
A method of forming metal oxide semiconductor field-effect transistors (MOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effect, to increase punch through voltage and to increase gate-aided breakdown voltage.