The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 1988

Filed:

Nov. 14, 1985
Applicant:
Inventors:

Masao Sakata, Kanagawa, JP;

Hideaki Shimamura, Kanagawa, JP;

Shigeru Kobayashi, Tokyo, JP;

Tsuneyoshi Kawahito, Kanagawa, JP;

Tsuneaki Kamei, Kanagawa, JP;

Katsuo Abe, Kanagawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
204298 ; 20419212 ;
Abstract

A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles. Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma. The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.


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