The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 1987

Filed:

Oct. 28, 1985
Applicant:
Inventors:

Klaus D Beyer, Poughkeepsie, NY (US);

James S Makris, Wappingers Falls, NY (US);

Eric Mendel, Poughkeepsie, NY (US);

Karen A Nummy, Newburgh, NY (US);

Seiki Ogura, Hopewell Junction, NY (US);

Jacob Riseman, Poughkeepsie, NY (US);

Nivo Rovedo, Poughquag, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156645 ; 156636 ; 156648 ; 156662 ; 156663 ; 2957 / ; 29580 ; 427 94 ;
Abstract

A chemical-mechanical (chem-mech) method for removing SiO.sub.2 protuberances at the surface of a silicon chip, such protuberances including 'bird's heads'. A thin etch stop layer of Si.sub.3 N.sub.4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO.sub.2 water based slurry. The Si.sub.3 N.sub.4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si.sub.3 N.sub.4 layer located on the top and at the sidewalls of the 'bird's heads' and the underlying SiO.sub.2 protuberances are removed to provide a substantially planar integrated structure.


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