The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 1986
Filed:
May. 02, 1984
Applicant:
Inventors:
Toshiharu Matsuzawa, Higashimurayama, JP;
Takao Iwayanagi, Tokyo, JP;
Kikuo Douta, Hachioji, JP;
Hiroshi Yanazawa, Tokyo, JP;
Takahiro Kohashi, Hachioji, JP;
Saburo Nonogaki, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; H01L / ; C23F / ;
U.S. Cl.
CPC ...
430313 ; 430-8 ; 430167 ; 430194 ; 430197 ; 430296 ; 430320 ; 430323 ; 430325 ; 156643 ;
Abstract
A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.