The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1986
Filed:
Oct. 30, 1984
Applicant:
Inventors:
Seiji Yasuda, Yokosuka, JP;
Toshio Yonezawa, Yokosuka, JP;
Shunichi Hiraki, Fujisawa, JP;
Masafumi Miyagawa, Kitakyushu, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 238 ; 357 41 ; 357 43 ; 357 88 ;
Abstract
A semiconductor device comprising a high voltage withstanding vertical MOSFET and a low voltage withstanding element both formed on a single chip. A buried layer of a high impurity concentration is formed in a region where the vertical MOSFET is formed, and another buried layer of a high impurity concentration is formed in a region where the low voltage withstanding element is formed. These buried layers have different thickness, whereby the series resistance of a circuit adjacent to the vertical MOSFET is reduced without lowering the withstand voltage of the vertical MOSFET.