The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1986
Filed:
Jun. 16, 1983
Masanobu Miyao, Tokorozawa, JP;
Makoto Ohkura, Hachioji, JP;
Iwao Takemoto, Nishitama, JP;
Terunori Warabisako, Nishitama, JP;
Kiichiro Mukai, Hachioji, JP;
Ryo Haruta, Kokubunji, JP;
Yasushiro Nishioka, Hachioji, JP;
Shinichiro Kimura, Kokubunji, JP;
Takashi Tokuyama, Higashikurume, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
At least one layer of insulator film and single-crystal film are alternately stacked and deposited on a surface of a semiconductor substrate, and an impurity-doped region formed in each semiconductor film is used as a gate, source or drain of a MOS transistor. Thus, a three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the semiconductor substrate surface, but also in a direction perpendicular thereto.