The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 1984
Filed:
Jan. 05, 1983
Shunichi Hiraki, Hiratsuka, JP;
Kiyoshi Kikuchi, Yokohama, JP;
Shigeo Yawata, Kawasaki, JP;
Masafumi Miyagawa, Kitakyushu, JP;
Abstract
A method for producing a semiconductor element which can form a deep P-type impurity region by a diffusion of aluminum. A porous alumina layer is first formed on a semiconductor substrate. Then, a diffusion-protective layer formed of a material having a large oxygen-diffusion-inhibiting ability such as Al.sub.2 O.sub.3 is formed on the porous alumina layer. Subsequently, aluminum ions are implanted in the porous alumina layer through the diffusion-protective layer. Thereafter, a heat treatment is performed to diffuse the aluminum of the aluminum ion-implanted region in the semiconductor substrate, and a P-type impurity region is formed. Alternatively, a porous alumina layer is formed on the semiconductor substrate, and an aluminum layer is then formed thereon. The diffusion-protective layer is formed on the aluminum layer, and a heat treatment is then performed, thereby diffusing the aluminum forming the aluminum layer in the semiconductor substrate, and a P-type impurity region is thus formed.