Shigeo Yawata

Title: Shigeo Yawata: Innovator in Semiconductor Technology

Introduction

Shigeo Yawata is a prominent inventor based in Kawasaki, Japan. He is known for his significant contributions to semiconductor technology, particularly in the area of aluminum diffusion methods. His innovative approach has paved the way for advancements in the production of semiconductor elements.

Latest Patents

Shigeo Yawata holds 1 patent for his invention titled "Diffusion of aluminum." This patent describes a method for producing a semiconductor element capable of forming a deep P-type impurity region through aluminum diffusion. The process involves forming a porous alumina layer on a semiconductor substrate, followed by the application of a diffusion-protective layer made from materials with high oxygen-diffusion-inhibiting abilities, such as Al₂O₃. Aluminum ions are then implanted, and heat treatment is performed to achieve the desired diffusion and impurity region formation.

Career Highlights

Shigeo Yawata has made significant strides in his career, working with Tokyo Shibaura Denki Kabushiki Kaisha, a leading company in the electronics and semiconductor industry. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Throughout his career, Shigeo Yawata has collaborated with notable colleagues, including Shunichi Hiraki and Kiyoshi Kikuchi. These collaborations have contributed to the development of innovative technologies and methodologies in the semiconductor field.

Conclusion

Shigeo Yawata's contributions to semiconductor technology, particularly through his patented methods for aluminum diffusion, highlight his role as an influential inventor in the industry. His work continues to impact the field, driving advancements in semiconductor manufacturing.